1 of 10 optimum technology matching ? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt soi rf in vg pin 1 ( cut ) g b g nd b ase rf ou t vd pin 2 t rfha1025 280w gan wideband pulsed power amplifier the rfha1025 is a 50v 280w high power discrete amplifier designed for l-band pulsed radar, air traffic control and su rveillance and general purpose broadband amplifier applications. using an advanced high power density gallium nitride (gan) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single pack- age. the rfha1025 is a matched power transistor packaged in a hermetic, flanged ceramic package. the package provides ex cellent thermal stability through the use of advanced heat sink and power dissipati on technologies. ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. features ? wideband operatio n: 0.96ghz to 1.215ghz ? advanced gan hemt technology ? advanced heat-sink technology ? supports multiple pulse conditions ? 10% to 20% duty cycle ? 100 ? s to 1ms pulse width ? integrated matching components for high terminal impedances ? 50v operation typical performance ? output pulsed power 280w ? pulse width 100 ? s, duty cycle 10% ? small signal gain 17db ? high efficiency 55% ? -40c to 85c operating temperature applications ? radar ? air traffic control and surveillance ? general purpose broadband amplifiers ds120928 ? package: flanged ceramic, 2-pin rfha1025 280w gan wideband pulsed power amplifier rfha1025s2 2-piece sample bag rfha1025sb 5-piece bag rfha1025sq 25-piece bag rfha1025sr 50 pieces on 7? short reel rfha1025tr13 250 pieces on 13? reel rfha1025pcba-410 fully assembled evaluation board 0.96ghz to .215ghz;50v
2 of 10 rfha1025 ds120928 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g )-8 to 2v gate current (i g )155ma ruggedness (vswr) 10:1 storage temperature range -55 to +125 c operating temperature range (t c )-40 to +85c operating junction temperature (t j )250c human body model class 1b mttf (t j < 200c, 95% confidence limits)* 1.8e + 07 hours mttf (t j < 250c, 95% confidence limits)* 1.1e + 05 hours thermal resistance, r th (junction to case): t c = 85c, dc bias only t c = 85c, 100 ? s pulse, 10% duty cycle t c = 85c, 1ms pulse, 10% duty cycle 0.90 0.18 0.34 c/w * mttf - median time to failure for wear-out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the devi ce voltage and current must not exce ed the maximum op erating values. bias conditions should also satisfy the following expression: p diss < (t j - t c )/r th j - c and t c = t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )50v gate voltage (v gsq )-8-3-2v drain bias current 440 ma frequency of operation 960 1215 mhz dc functional test i g (off) ? gate leakage 2 ma v g = -8v, v d = 0v i d (off) ? drain leakage 2.5 ma v g = -8v, v d = 50v v gs (th) ? threshold voltage -3.5 v v d = 50v, i d = 40ma v ds (on) ? drain voltage at high current 0.28 v v g = 0v, i d = 1.5a rf functional test [1], [2] small signal gain 17 db f = 960mhz, p in = 28dbm power gain 13 14.2 db f = 960mhz, p in = 41dbm input return loss -7.5 -5 db output power 54 55.2 dbm drain efficiency 50 55 % small signal gain 17 db f = 1215mhz, p in = 28dbm power gain 13 13.6 db f = 1215mhz, p in = 41dbm input return loss -7 -5 db output power 54 54.6 dbm drain efficiency 50 59 % caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 10 rfha1025 ds120928 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . rf typical performance [1], [2] frequency range 960 1215 mhz small signal gain 17 db p in = 28dbm power gain 14 db p out = 54.5dbm gain variation with temperature db/c at peak output power output power (p sat ) 54.5 dbm peak output power 280 w drain efficiency 55 % at peak output power [1] test conditions: pw = 100 ? s, dc = 10%, v dsq = 50v, i dq = 440ma, t = 25c. [2] performance in a standard tuned test fixture. parameter specification unit condition min. typ. max.
4 of 10 rfha1025 ds120928 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standa rd fixed tuned test fixture (t = 25c, unless noted) 13 14 15 16 17 18 19 20 47 49 51 53 55 gain(db) outputpower(dbm) gainversusoutputpower(f=1100mhz) (pulsed10%dutycycle,pw=100 ,v d =50v, i dq =440ma) gain85c gain25c gain40c 10 20 30 40 50 60 70 45 47 49 51 53 55 drainefficiency(%) outputpower(dbm) efficiencyversusoutputpower(f=1100mhz) (pulsed10%dutycycle,pw=100s,v d =50v,i dq =440ma) eff85c eff25c eff40c 20 18 16 14 12 10 8 6 4 47 49 51 53 55 irl,inputreturnloss(db) outputpower(dbm) inputreturnlossversusoutputpower(f=1100mhz) (pulsed10%dutycycle,pw=100s,v d =50v,i dq =440ma) irl85c irl25c irl40c 19 17 15 13 11 9 7 13 14 15 16 17 18 19 950 1000 1050 1100 1150 1200 1250 inputreturnloss(db) gain(db) frequency(mhz) smallsignalperformanceversusfrequency,p out =45dbm (pulsed10%dutycycle,pw=100 ,v d =50v,i dq =440ma) gain irl fixedtuned testcircuit 14 13 12 11 10 9 8 7 6 12 13 14 15 16 17 18 19 20 950 1000 1050 1100 1150 1200 1250 inputreturnloss(db) gain(db) frequency(mhz) gain/irlversusfrequency,p out =54.5dbm (pulsed10%dutycycle,pw=100 ,v d =50v,i dq =440ma) gain irl fixedtuned testcircuit 45 47 49 51 53 55 57 59 61 63 65 950 100010501100115012001250 drainefficiency(%) frequency(mhz) drainefficiencyversusfrequency,p out =54.5dbm (pulsed10%dutycycle,pw=100s,v d =50v,i dq =440ma) eff fixedtuned testcircuit
5 of 10 rfha1025 ds120928 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standa rd fixed tuned test fixture (t = 25c, unless noted) 25 30 35 40 45 50 55 60 65 12 13 14 15 16 17 18 19 20 47 48 49 50 51 52 53 54 55 drainefficiency(%) gain(db) p out ,outputpower(dbm) gain/efficiencyversusp out ,freq=1100mhz (pulsed10%dutycycle,pw=100s,v d =50v,i dq =440ma) gain draineff 40 45 50 55 60 65 70 250 275 300 325 350 375 400 10 100 1000 drainefficiency(%) p out (w) pulsewidth(sec) p out /deversuspulsewidth,freq=1100mhz (pulsed10%dutycycle,v d =50v,i dq =440ma) outputpower draineff 40 45 50 55 60 65 70 225 250 275 300 325 350 375 10 15 20 25 30 35 40 45 50 drainefficiency(%) p out (w) dutycycle(%) p out /deversusdutycycle,freq=1100mhz (pulsed,pw=100s,v d =50v,i dq =440ma) outputpower draineff 0 200 400 600 800 1000 1200 0 20 40 60 80 100 120 140 powerdissipation(w) maximumcasetemperature( c) pulsepowerdissipationderatingcurve (basedonmaximumpackagetemperatureandrth) 1mspulsewidth,10%dutycycle 100spulsewidth,10%dutycycle
6 of 10 rfha1025 ds120928 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing (all dimensions in mm.) pin names and descriptions pin name description 1rf in vg gate ? v g rf input 2rf out vd drain ? v d rf output 3gnd base source ? ground base 17.40 0.1 24.00 0.1 3.000 0.600 0.05 2.600 4x 3.100 4x 16.700 15.800 20.400 8.000 0.600 0.05 3.000 3.8000.2 1.400 0.100+0.05 -0.02 0.2540.127 lid 4.0540.327 2 min 3.5 max 2 min 3.5 max
7 of 10 rfha1025 ds120928 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rfha1025 evaluation board esd sensitive material. please use proper esd precautions wh en handling devices of evalua tion board. evaluation board requires additional external fan cooling. conne ct all supplies before powering evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure th at both the vg and vd grounds are also connected to this ground terminal. 3. apply -8v to vg. 4. apply 50v to vd. 5. increase v g until drain current reaches 440ma or desired bias point. 6. turn on the rf input. important note: depletion mode device; when biasing the device, v g must be applied before v d . when removing bias, v d must be removed before v g is removed. failure to follow this sequence will cause the device to fail. note: for optimal rf performance, consistent and optimal heat remo val from the base of the package is required. a thin layer of thermal grease should be applied to the interface between th e base of the package and the equipment chassis. it is recom- mended that a small amount of thermal grease is applied to the underside of the device package. even application and removal of excess thermal grease can be achieved by spreadin g the thermal grease using a razor blade. the package should then be bolted to the chassis and input and output leads soldered to the circuit board .
8 of 10 rfha1025 ds120928 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic evaluation board bill of materials component value manufacturer part number r1,r3 10 ? panasonic erj-8geyj100v r2 51 ? panasonic erj-8geyj510 c6 82pf atc atc800a820jt c4, c5, c9, c10 100pf atc atc800a101jt c2, c3 2pf atc atc800a2r0bt c17 0.2pf atc atc800a0r2bt c12 10000pf panasonic ecj-2vb1h103k c13 0.1 ? f panasonic ecj-2vb1h104k c7 10000pf panasonic ecj-2vb2a103k c8 0.1 ? f panasonic ecj-2vb2a104k c14, c16 10 ? f panasonic ECA-2AM100 l1,l2 68nh coilcraft 1812sms-68njlb l5, l6 115 ? , 10a steward 28f0181-1sr-10 l3, l4 75 ? , 10a steward 35f0121-1sr-10 c1, c11, c15 not populated - - rfha1025 c2 r1 c9 v gate c4 50 ? ? ? strip 50 ? ? ? strip j2 rf out l1 l2 c13 c16 + c6 c11 c10 c7 c8 r2 l3 l4 j1 rf in l5 l6 c14 + c17 v drain c5 c1 r3 c12 c15 c3
9 of 10 rfha1025 ds120928 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board layout device impedances frequency (mhz) z source ( ? ) z load ( ? ) 960mhz 68 - j10 63 ? j20 1100mhz 55 + j30 65 + j32 1215mhz 30 + j20 40 + j30 note: device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth.
10 of 10 rfha1025 ds120928 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/envir onmental conditions rfmd does not recommend operating this device with typical drain voltage ap plied and the gate pinched off in a high humidity, high temperature environment. gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. gan hemt capacitances the physical structure of the gan hemt results in three terminal capacitors similar to other fet technologies. these capacitances exist across all three terminals of th e device. the physical manufactured characteristics of the device determine the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages ar e varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = -8v) and zero volts applied to th e drain. during the measurement pro- cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. any internal matching is included in the terminal ca pacitance measurements. the ca pacitance values presented in the typical characteristics table of th e device represent the measured input (c iss ), output (c oss ), and reverse (c rss ) capacitance at the stated bias voltages. the relationship to three terminal capacitances is as follows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd dc bias the gan hemt device is a depletio n mode high electron mobility tr ansistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transi stor. the gate voltage must be taken to a potential lower than the source voltage to pinch off th e device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determin ed by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristic s of the device. the recom- mended quiescent drain current (i dq ) shown in the rf typical performance ta ble is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. the user may choose alternate conditions for biasin g this device based on performance tradeoffs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal charac- teristics. this is measured using ir microscopy capturin g the device under test temperature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the meas urement system from impacting the results. knowing the dissipated power at the time of th e measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat remo val must be considered to maintain the junction at or below the maximum of 200c. proper thermal design includes considerat ion of ambient temperature and the thermal resistance from ambient to the back of the package including he atsinking systems and air flow mecha- nisms. incorporating the dissipated dc power, it is possi ble to calculate the junction temperature of the device.
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